Brochure from Catalog

° COLD FET™ technology. This revolutionary technology, a DB Elettronica international patent, is used in the KF 300 amplifier to optimize the input matching of MOS-FET transistors in order to obtain broadband amplification stages without any RF component. This means:
- high RF efficiency > 83%
- lower heating
- higher devices safety
- higher total reliability
- low AC power consumption

° Extraordinary RF efficiency: the COLD-FET™ technology allows to obtain from the amplifiers the full power rating reducing of almost 20% the devices recommended operating DC voltage and current.

° Uninterrupted service. A proportional foldback protection circuit reduces the output power without any on-air interruption, keeping the RF devices always within the safety conditions in case of:
- load mismatching
- environmental over-temperature
- cooling failure
- failure in the amplifier module
- failure in power supply modules

° Broadband: no adjustments are required for the full power operation in the 87.5÷108 MHz band.

° The automatic power control circuit adjusts and stabilizes with precision (±1%) the maximum output power in the whole band.

° Switch-mode power supply. High efficiency (> 80 %) and oversized power supply modules grant low heating, low AC power consumption and superior reliability.

° Low overheating. The high cooling system efficiency limits at only + 10°C the heatsink overheating respect to the environmental temperature. This permits the service even in overheated sites.

° Low consumption. The high overall efficiency means a reduction of AC power consumption and operating costs.

° Metering. A complete metering system placed on the front panel permits the precise reading of: all currents and voltages of each MOS-FET stage, forward power, reflected power.

° Remote control. It is available as option ( KFA/RC ) a remote control interface for the following parameters: voltages and currents of each RF stage, forward power, reflected power, alarms status, on/off, stand-by..